除了传统芯片巨头，新兴企业也在 3D DRAM 领域积极探索。 NEO Semiconductor 公司宣布推出一项全新技术，旨在彻底改变当前 DRAM 存储器的发展格局。该公司推出了两款全新的 3D X-DRAM 单元设计，分别为 ...

On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

In 2015, researchers reported a surprising discovery that stoked industry-wide security concerns—an attack called RowHammer that could corrupt, modify, or steal sensitive data when a simple user-level ...

For decades, compute architectures have relied on dynamic random-access memory (DRAM) as their main memory, providing temporary storage from which processing units retrieve data and program code. The ...

DRAM manufacturers continue to demand cost-effective solutions for screening and process improvement amid growing concerns over defects and process variability, but meeting that demand is becoming ...

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...

Machine learning (ML), a subset of artificial intelligence (AI), has become integral to our lives. It allows us to learn and reason from data using techniques such as deep neural network algorithms.

NEO Semiconductor has unveiled its "3D X-DRAM", which it is pitching as the world's first 3D NAND-like DRAM cell array. Based on Neo's estimates, 3D X-DRAM technology can achieve 128 Gb density with ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...