Duke engineers show how a common device architecture used to test 2D transistors overstates their performance prospects in real-world devices.

By engineering the device structure of ferroelectric memory and introducing a nanogate-induced electric field concentration effect, the researchers developed a ferroelectric transistor capable of ...

Lab architecture used to test 2D semiconductors artificially boosts performance metrics, making it harder to assess whether these materials can truly replace silicon.

Northrop Grumman researchers have produced and demonstrated a transistor that has a maximum frequency of operation of more than 1,000 GHz. The device is an indium phosphide-based High Electronic ...

A 28-V, 5-W class high electron mobility transistor (HEMT) from Nitronex now operates at frequencies that fall between 5.1 GHz to 5.2 GHz and 5.7 GHz to 5.8 GHz. The NPTB00004 gallium nitride on ...

Researchers from IBM (East Fishkill, NY) and Georgia Institute of Technology (Atlanta, GA) recently announced an SiGe transistor operating above 500 GHz claimed 250 times faster than the average ...

The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...