Samsung Electronics today announced that it has developed the first all-DRAM stacked memory package using ‘through silicon via’ (TSV) technology, which will soon result in memory packages that are ...

Researchers have developed a stacking technology for a magneto-resistive random access memory (MRAM) to separately form a single-crystal tunnel magnetoresistive (TMR) thin film and then bond it to a ...

(Nanowerk News) The magnetic, conductive and optical properties of complex oxides make them key to components of next-generation electronics used for data storage, sensing, energy technologies, ...

Georgia Tech-Europe and MIT researchers are using emerging technology to demonstrate a process that will enable more immersive and realistic virtual and augmented reality displays with the world’s ...