A prototype nitride-based single-die power transistor developed by semiconductor manufacturer NEC (Tokyo, Japan) has set a record by amplifying a 30-GHz signal to the 2.3-W level. Previous levels ...

The BLL6H1214-500 is a laterally diffused metal oxide semiconductor (LDMOS) transistor for L-band radar applications delivering 500-W RF output power from 1.2 to 1.4 GHz. It is targeted at radar ...