A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...

Last week I explained how to use a motion sensor to trigger an event with an Arduino. The event we triggered was a simple blinking of an LED. You can do a lot with a bunch of LEDs if you use your ...

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...

The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.

GaN-on-silicon E-HEMT transistors are the choice for maximum performance, efficiency and cost-effective power supplies. Cost-effective driver technology enhances supply performance by simplifying ...

Two devices join ST’s MasterGaN portfolio of integrated GaN transistor/driver power packages for applications up to 45 W and 150 W. The MasterGaN3 and MasterGaN5 power system-in-package (SIP) devices ...