Abstract: In 2025, we are reaching a major milestone: 100 years since the conception of the Field Effect Transistor (FET). To commemorate this occasion, the IEEE Electron Devices Society (EDS) is ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...

The IEEE International Electron Devices Meeting (IEDM) is considered the premier forum where scientists and engineers come together to disclose, discuss and debate the best recent R&D work in electron ...

Experiencing a baseball game at the home venue of the Colorado Rockies at Coors Field is almost surreal. The breathtaking views of the summer night sunsets turning shades of orange and purple make for ...

Feedback field-effect transistors (FBFETs) represent a significant evolution in semiconductor device technology. Incorporating a positive feedback mechanism, these devices exhibit extremely steep ...

A technical paper titled “CFET Beyond 3 nm: SRAM Reliability under Design-Time and Run-Time Variability” was published by researchers at TU Munich and IIT Kanpur. Find the technical paper here. May ...

Abstract: This study introduces a cross field-effect transistor (CrossFET) design, which features two orthogonally crossed transistors: an n-channel field-effect transistor (NFET) and a p-channel ...

Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1, Komaba, Meguro-ku 153-8904, Tokyo, Japan Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, ...

A research team led by Professor Zhang Zhiyong at Peking University has developed an innovative short-wave infrared (SWIR) detector with remarkable sensitivity and high photoresponse, capable of ...